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DMN2016UTS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
±10
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
0.4
-
-
-
0.72
11
13
19
0.65
1.0
14.5
16.5
-
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 9.4A
V GS = 2.5V, I D = 8.3A
V DS = 5V, I D = 9.4A
V GS = 0V, I S = 1.3A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
1495
161
152
1.42
16.5
2.5
3.2
10.39
11.66
59.38
16.27
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V DS = 10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 9.4A
V DD = 10V, V GS = 4.5V,
R GEN = 6 ? , I D = 1A, R 1 = 10 ?
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
30
30
25
V GS = 4.5V
25
V DS = 5V
V GS = 3.0V
20
15
10
V GS = 2.5V
V GS = 2.0V
V GS = 1.5V
V GS = 1.5V
20
15
10
T A = 150°C
5
5
T A = 125°C
T A = 85°C
T A = 25°C
0
0
V GS = 1.2V
0.5 1 1.5
2
0
0
T A = -55°C
0.5 1 1.5 2 2.5
3
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMN2016UTS
Document number: DS31995 Rev. 1 - 2
2 of 6
www.diodes.com
December 2009
? Diodes Incorporated
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